Features | Aplicaciones |
- Half Bridge IGBT MTP
- Features
- Generation 4 wrap speed IGBT technology
- HEXFRED antiparallel diodes with ultrasoft
- reverse recovery
- Very low conduction and switching losses
- Optional SMD thermistor (NTC)
- Very low juntion to case thermal resistance
- UL approved file E78996
- Speed 60 kHz to 100 kHz
- Compliant to RoHS directive 2002/95/EC
- Designed and qualified for industrial level
| - Applications
- Optimized for Welding, UPS and SMPS
- Low EMI, requires Less Snubbing
- Direct Mounting to Heatsink
- PCB Solderable Terminals
- Very Low stray inductance design for high
- speed operation
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Marca: No identificadoCaracterísticas electricas: 50A/600V/1U |
Vishay IGBTs Type : IGBT |
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Type | Dual | Vces | 600 Volts DC | Ic | 114 Amps | Vges +/- | 20 | Ices Max | 10 MilliAmps | Iges Max | 0.25 MicroAmps | Vge(th) Min/Max | 3~6 Volts | Vce(sat) Max | 2.3 Volts | Height (mm) | 20.5 | Width (mm) | 63.5 | Depth (mm) | 33 | Approvals | UL |
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