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INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast: Optimized for high
operating frequency >5.0 kHz, and Short Circuit
Rated to 10us @ 125u00c2u00b0C, VGE = 15V
Generation 4 IGBT design provides higher efficiency
than Generation 3
Industry standar TO-247AC package
Semiconductors High Power Equipment Repair