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GT20J301
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  • GT20J301

GT20J301

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DatasheetGT20J301

20A/600V/1U

No Identificado

Delivery time :

Quantity
On request

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Features

SILICON N CHANNEL IGBT

Fearures

The 3rd Generation

Enhancement-Mode

High Speed : tf=0.30us (Max.)

Low Saturation Voltage : VCE(sat) = 2.7V (Max.)

FRD included between Emitter and Collector

Aplications

Semiconductors High Power Equipment Repair

GT20J301

Specific References

MPN
GT20J301
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