- On request
GT20J301
13,13 $
steuerfrei
GT20J301
Política de seguridad
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Features
SILICON N CHANNEL IGBT
Fearures
The 3rd Generation
Enhancement-Mode
High Speed : tf=0.30us (Max.)
Low Saturation Voltage : VCE(sat) = 2.7V (Max.)
FRD included between Emitter and Collector
Aplications
Semiconductors High Power Equipment Repair
GT20J301
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- GT20J301
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