- On request
IRG4PF50WDPBF
1,31 $
steuerfrei
IRG4PF50WDPBF
Política de seguridad
(Los productos cuentan con garantía limitada, por favor revisa nuestras condiciones)
Shipping and Returns
All products come with a warranty against manufacturing defects.
Trademark Disclaimer
All trademarks, logos, and part numbers are the property of their respective owners click for more
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Optimized for use in Welding and Switch-Mode
Power Supply applications
Industry benchmark switching losses improve
efficiency of all power supplies topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Lastest technology IGBT design offers tighter
parameter distribution coupled with
exceptional reliability
IGBT co-packaged with HEXFRED ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry standar TO-247AC package
Leads-Free
Aplications
Semiconductors High Power Equipment Repair
IRG4PF50WDPBF
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- IRG4PF50WDPBF
Kommentare (0)
Aktuell keine Kunden-Kommentare
16 andere Artikel in der gleichen Kategorie:
