• On request
IRG4PF50WDPBF
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  • IRG4PF50WDPBF

IRG4PF50WDPBF

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DatasheetIRG4PF50WDPBF

28A/900V/1U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Optimized for use in Welding and Switch-Mode

Power Supply applications

Industry benchmark switching losses improve

efficiency of all power supplies topologies

50% reduction of Eoff parameter

Low IGBT conduction losses

Lastest technology IGBT design offers tighter

parameter distribution coupled with

exceptional reliability

IGBT co-packaged with HEXFRED ultrafast,

ultra-soft-recovery anti-parallel diodes for use

in bridge configurations

Industry standar TO-247AC package

Leads-Free

Aplications

Semiconductors High Power Equipment Repair

IRG4PF50WDPBF

Specific References

MPN
IRG4PF50WDPBF
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