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IRG4PF50WDPBF
1,31 $
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IRG4PF50WDPBF
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Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Optimized for use in Welding and Switch-Mode
Power Supply applications
Industry benchmark switching losses improve
efficiency of all power supplies topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Lastest technology IGBT design offers tighter
parameter distribution coupled with
exceptional reliability
IGBT co-packaged with HEXFRED ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry standar TO-247AC package
Leads-Free
Aplications
Semiconductors High Power Equipment Repair
IRG4PF50WDPBF
Riferimenti Specifici
- MPN
- IRG4PF50WDPBF
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