Features
- MOS FIELD EFFECT TRANSISTOR
- Super Low on-state resistance :
- RDS(on)1 = 11mOhms MAX. (VGS = 10 V, ID = 42 A)
- RDS(on)2 = 13 mOhms MAX. (VGS = 4.5 V , ID = 42A)
- Low Ciss : Ciss = 11000 pF TYP.
- Built-in gate protection diode
Aplications
- Semiconductors High Power Equipment Repair
PH600S280-24P1 TDK
Referências específicas
- MPN
- PH600S280-24P1 TDK