- Nicht auf Lager
IRG4BC30UD
7,88 $
steuerfrei
IRG4BC30UD
Política de seguridad
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Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
- Fast Optimized for medium operating
- frequencies ( 1 - 5 kHz in hard switching, >20
- kHz in resonant mode)
- Generation 4 IGBT design provides tighter
- parameter distribution and higher efficiency than Generation 3
- IGBT co-package with HEXFRED ultrafast, ultra
- -soft, recovery anti-parallel diodes for use in
- bridge configurations
- Industry standar TO-220AB package
- Lead-Free
Aplications
- Semiconductors High Power Equipment Repair
IRG4BC30UD
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- IRG4BC30UD
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