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Insulated Gate Bipolar Transistor
with Ultrafast Soft Recovery Diode
Low VCE(on) and switching losses
Square RBSOA and maximun juntion temperature 175 C
Positive VCE(ON) temperature coefficient
5 us Short Circuit SOA
Lead-Free, RoHS Compliant
High efficiency in a wide range of applications switching
Improved realibility due to rugged hard switching performance and high power capability
Excellent current sharing in parallel operation
Enables short circuit protection schema
Enviromentally friendly
Applications
Industrial Motor Drive
Inverters
Welding