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MG30G6EL1
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MG30G6EL1

44,63 $
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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG30G6EL1

30A/600V/6U

No Identificado

Delivery time :

Menge
On request

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Features

SILICON NPN TRIPLE DIFFUSED IGBT MODULE

The Collector is Isolated from Ground

6 Power Transistors and 6 Free Wheeling Diodes are Built Into

1 PackageHigh

DC Current Gain :

hfe = 100(Min.) (IC=30A)

Low Saturation Voltage:

VCE(sat)=2V (Max.) (IC=30A)

High Speed : tf=2us (Max.) (IC=30A)

Aplications

Applications

High Power Switching

Motor Control

Toshiba * Transistor

Toshiba

MG30G6EL1

TRANSISTOR 30A 450V SIX-PACK

MG30G6EL1

Besondere Bestellnummern

Hersteller-Teilenummer (MPN)
MG30G6EL1
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