Features
- Silicon P Channel Power MOS FET
- Capable of -4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
- RDS(on) = 3.6 mOhms typ ( at VGS = -10 V)
Aplications
- Semiconductors High Power Equipment Repair
SEMIX171KH16S
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- SEMIX171KH16S