- On request
SKM150GB124D
91,88 $
steuerfrei
SKM150GB124D
Política de seguridad
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Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
Low Loss IGBT MODULE
MOS input (voltage controlled)
N channel, homogeneous Silicon
structure NPT-IGBT )
Low inductance case
Very low tail current with low temperature dependence
High short circuit capability, self limiting to 6 x Icnom
Latch-up free
Fast & soft inverse CAL diodes
Isolated copper baseplate using DCB Direct Copper Bonding Technology
Large clearance ( 12 mm ) and creepage distances ( 20 mm )
Aplications
Applications
Switching (not for linear use)
AC inverter drives
Semikron IGBTs
Semikron
SKM150GB124D
IGBT 150A 1200V DUAL LOW LOSS ; Type; Dual
Vces; 1200 Volts DC
Ic; 150 Amps
Vges +/-; 20
Ices Max; 0.3 MilliAmps
Vge(th) Min/Max; 4.5~6.5 Volts
Vce(sat) Max; 2.45 Volts
Height (mm); 30.5
Width (mm); 106.4
Depth (mm); 61.4
RoHS; Yes ;
SKM150GB124D
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- SKM150GB124D
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