- On request
SKM150GB125D
105,00 $
steuerfrei
SKM150GB125D
Política de seguridad
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Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
Ultra Fast IGBT MODULE
N channel, homogeneous Silicon
structure (NPT-Non punch-through IGBT)
Ultra afst with heavy metal doping
Low inductance case
Almost no tail current
High short circuit capability, self limiting to 6 x Icnom
Latch-up free
Fast & soft inverse CAL diodes
Isolated copper baseplate using DCB Direct Copper Bonding Technology
Large clearance ( 12 mm ) and creepage distances ( 20 mm )
Aplications
Applications
Fast switching (not for linear use)
High frequency welding
Induction heating
Resonant inverters (CSI, ZV, ZC)
Uninterruptible power supplies > 20 kHz
Semikron IGBTs
Semikron
SKM150GB125D
IGBT 150A 1200V DUAL ; Type; Dual
Vces; 1200 Volts DC
Ic; 100 Amps
Vges +/-; 20
Ices Max; 2 MilliAmps
Iges Max; 1 MicroAmps
Vge(th) Min/Max; 4.5~6.5 Volts
Vce(sat) Max; 8 Volts
Height (mm); 30.5
Width (mm); 106.4
Depth (mm); 61.4
RoHS; Yes ;
SKM150GB125D
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- SKM150GB125D
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