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Low Loss IGBT MODULE
MOS input (voltage controlled)
N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)
Low inductance case
Very low tail current with low temperature dependence
High short circuit capability, self limiting to 6 x Icnom
Latch-up free
Fast & soft inverse CAL diodes
Isolated copper baseplate using DBC Direct copper Bonding Technology without hard mould
Large clearance ( 12 mm ) and creepage distances ( 20 mm )
Applications
Switching ( not for linear use )
AC Inverters drives
UPS