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Dual Enhancement Mode
Field Effect Transistor (N and P Channel)
30V, 3.5A , RDS(ON)=50mOhms @ VGS=10V
RDS(ON)=80mOhms @ VGS=4.5V
-30V, -3.5A; RDS(ON)100mOhms @ VGS=-10V
RDS(ON)=100mOhms @ VGS=-4.5V
Super high dense cell designed for extremely low RDS(ON)
High power and current handing capability
Surface Mount package
Semiconductors High Power Equipment Repair