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Silicon N Channel MOS Type
Small footprint due to small and thin package
Low drain-source ON resistance : RDS(ON)= 40mOhms (typ.)
Hogh forward transfer admittance : Yfs = 7.0 S (typ.)
Low leakage current : IDSS = 10 uA (max) (VDS = 60 V)
Enhancem
Semiconductors High Power Equipment Repair