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SILICON N CHANNEL IGBT MODULE
Integrates inverter, brake power circuit
and control circuits (IGBT drive units,
protection units for over-current, under-voltage and over-temperature) in one package
The Electrodes are Isolated from Case
High speed type IGBT :
VCE(sat) = 2.5 V (Max)
toff = 3.0 us (Max)
trr = 0.30 us (Max)
Package dimensions : TOSHIBA 2-110A1A
Applications
High Power Switching
Motor Control
Toshiba
MIG75J201H
IPM 75A 600V 7-PACK