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GT30J121

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DatasheetGT30J121

30A/600V/1U

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Quantity
On request

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  Política de entrega

(Delivery 1-2 days for products in stock)

Features

Silicon N Channel IGBT

The 4th generation

Enhancement-mode

Fast switching (FS) : Operating frequency up to 50kHz (reference)

High speed : tf = 0.05 us (typ)

Low switching loss : Eon = 1.00 mJ (typ)

Eoff = 0.80 mJ (typ)

Low saturation voltage : VCE(sat) = 2.0 V (TYP)

Aplications

Semiconductors High Power Equipment Repair

GT30J121

Specific References

MPN
GT30J121
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