• On request
IXBH9N160G
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  • IXBH9N160G

IXBH9N160G

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DatasheetIXBH9N160G

9A/1600V/1U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

High Voltage BIMOSFET

International standar package

JEDEC TO-247 AD

High Voltage BIMOSFET replaces high voltage

Darlingtons and series connected MOSFETs

Lower effective RDS (on)

Monolithic construction

high blocking voltage capability

very fast turn-off characteristics

MOS Gate turn-on drive simplicity

Intrinsic diode

Aplications

Applications

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

CRT deflection

Lamp ballasts

IXYS Transistor

IXYS

IXBH9N160G

TRANSISTOR,1600V,9A

IXBH9N160G

Specific References

MPN
IXBH9N160G
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