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MCC95-12I01B

$39.60
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DatasheetMCC95-12I01B

700mA/30V/1U

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Features

  • Silicon NPN Transistor
  • High Total Power Dissipation, PT = 350 mW
  • High Hfe and low VCE (sat)
  • Hfe (IC) = 100mA) : 200 TYP.
  • VCE (sat) (700mA) : 0.20 TYP.
  • Complementary to the NEC 2SB810 PNP transistor

Aplications

  • Semiconductors High Power Equipment Repair
MCC95-12I01B

Specific References

MPN
MCC95-12I01B
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