Features | Aplicaciones |
- Low Loss IGBT MODULE
- Features
- MOS input (voltage controlled)
- N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)
- Low saturation voltage
- Low inductance case
- Low tail current with low temperature
- dependence
- High short circuit capability, self
- limiting to 6 Icnom
- Latch-up free
- Fast & soft inverse CAL diodes
- Isolated copper baseplate using DCB
- Direct Copper BondingTechnology
- without hard mould
- Large clearance (12mm) and creepage
- distances (20mm)
| - Applications
- Switching ( not for linear use )
- Inverters drive
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Marca: No identificadoCaracterísticas electricas: 200A/1200V/2U |
Semikron IGBTs Type : IGBT 200A 1200V DUAL |
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Type | Dual | Vces | 1200 Volts DC | Ic | 200 Amps | Vges +/- | 20 | Ices Max | 0.3 MilliAmps | Vge(th) Min/Max | 4.5~6.5 Volts | Vce(sat) Max | 2.45 Volts | Height (mm) | 30.5 | Width (mm) | 106.4 | Depth (mm) | 61.4 |
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