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Silicon N Channel IGBT MODULE
The electrodes are isolated from case
6 IGBTs are built into 1 package
Enhancement-mode
Low saturation voltage
VCE (sat) = 4.0V (Max.) (IC = 10A)
High speed : tf = 0.35us (Max.) (IC = 10A)
trr = 0.15us (Max.) (IF = 10A)
Applications
High Power Switching
Motor Control