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SKD100GAL123D
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  • SKD100GAL123D
  • SKD100GAL123D

SKD100GAL123D

$236.25
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MODULOS IGBT

Última actualización

DatasheetSKD100GAL123D

90A/1200V/7U

No identificado

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Out-of-Stock

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  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • Input Bridge B6U with brake chopper MODULE
  • Round main terminals (2 mm o/)
  • Easy drilling of PCB
  • Input diodes glass passivated
  • 1400 V PIV
  • High I2t rating (inrush current)
  • IGBT is latch-up free, homogeneous NPT
  • silicon-structure
  • High short circuit capability, self limiting to 6
  • Icnom
  • Fast & soft CAL diodes
  • Isolated copper baseplate using DCB Direct Copper
  • Bonding Technology
  • Large clearance (9 mm) and creepage distances
  • (13 mm)

Aplications

  • Applications
  • Input rectifier bridge
  • (B6U) with brake chopper
  • for PWM inverter drives
  • using SEMITRANS
  • SKM 75GD123D

Semikron Transistor

Semikron

SKD100GAL123D

BRIDGE W/CHOPPER IGBT 100A 1200V

SKD100GAL123D

Specific References

MPN
SKD100GAL123D
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