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IGBT MODULE
N channel, Homogeneous Silicon structure (NPT-IGBT)
Very low tail current with low temperature dependence
High short circuit capability, self limiting to 6 ICNOM
Latch-up free
Fast & soft inverse CAL diodes
Isolated copper baseplate using DCB Direct Copper Bonding
Large clearance ( 10 mm ) and creepage distances ( 20 mm )
Applications
Bidirectional switches as reverse blocking IGBT
Regenerative Branking
Quasi resonant inverters
DC bus voltage 750 - 1200 VDC
Public transport (auxiliary syst.)
Switching (not for linear use)