- On request
2SK3479
$5.25
No tax
2SK3479
Política de seguridad
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Features
MOS FIELD EFFECT TRANSISTOR
Super Low on-state resistance :
RDS(on)1 = 11mOhms MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 13 mOhms MAX. (VGS = 4.5 V , ID = 42A)
Low Ciss : Ciss = 11000 pF TYP.
Built-in gate protection diode
Aplications
Semiconductors High Power Equipment Repair
2SK3479
Specific References
- MPN
- 2SK3479
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