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MOS FIELD EFFECT TRANSISTOR
Super Low on-state resistance :
RDS(on)1 = 11mOhms MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 13 mOhms MAX. (VGS = 4.5 V , ID = 42A)
Low Ciss : Ciss = 11000 pF TYP.
Built-in gate protection diode
Semiconductors High Power Equipment Repair