- On request
2SD2562
$13.13
No tax
2SD2562
Política de seguridad
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Features
Silicon NPN Darlington Power Transistor
Collector-Emitter Breakdown Voltage- : VBR(CEO)= 150 V (Min)
High DC Current Gain- : hfe= 5000(min) @ (IC=10A, VCE=4V)
Low Collector Saturation Voltage- : VCE(sat)=2.5V(Max)@(IC=10A, IB=10mA)
Complement to type 2SB1649
Aplications
Applications
Designed for series regulator and general purpose
2SD2562
Specific References
- MPN
- 2SD2562
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