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Insulated Gate Bipolar Transistor
Ultrafast: Optimized for minimun satuartion
voltage and speed 0 to 40 kHz in hard switching,
> 200 kHz in resonant mode
Very low conduction and switching losses
Fully isolated package (2500 V AC/RMS)
Very low internal inductance (_< 5 nH typical)
Industry standard outline
UL approved file E78996
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial market
Semiconductors High Power Equipment Repair