- On request
RJH60F5
$10.50
No tax
RJH60F5
Política de seguridad
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Features
High Speed Power Switching
Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ohms, Ta = 25 C, inductive load)
Aplications
Semiconductors High Power Equipment Repair
RJH60F5
Specific References
- MPN
- RJH60F5
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