- On request
(Our products have limited warranty, please check our terms)
(Delivery 1-2 days for products in stock)
High Speed Power Switching
Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ohms, Ta = 25 C, inductive load)
Semiconductors High Power Equipment Repair