- On request
RJP63K2
$3.94
No tax
RJP63K2
Política de seguridad
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Features
Silicon N Channel IGBT, High Speed Power Switching
Trench gate and thin wafer technology (G6H-II series )
Low collector to emitter saturation voltage : VCE(sat) = 1.9 V typ
High speed switching . Tr = 60 ns typ, tf = 200 ns typ
Low leak current : ICES = 1 uA max
Isolated package TO-220FL
Aplications
Semiconductors High Power Equipment Repair
RJP63K2
Specific References
- MPN
- RJP63K2
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