- Out-of-Stock
RJP63K2
$3.94
No tax
RJP63K2
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
- Silicon N Channel IGBT, High Speed Power Switching
- Trench gate and thin wafer technology (G6H-II series )
- Low collector to emitter saturation voltage : VCE(sat) = 1.9 V typ
- High speed switching . Tr = 60 ns typ, tf = 200 ns typ
- Low leak current : ICES = 1 uA max
- Isolated package TO-220FL
Aplications
- Semiconductors High Power Equipment Repair
RJP63K2
Specific References
- MPN
- RJP63K2
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