• On request

6MBI75S120-01

150,00 $
Aucune taxe

IGBT - IPM

Última actualización

Datasheet6MBI75S120-01

2.7A/520V/1U

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Delivery time :

Quantité
On request

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Features

N-Channel Power MOSFET

100% avalanche tested

Extremely high dv/dt capability

Gate charge minimized

Very low intrinsic capacitances

Very good manufacturing repeatability

Improved ESD capability

Aplications

Applications

Switching

6MBI75S120-01

Références spécifiques

MPN
6MBI75S120-01
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