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N-Channel Power MOSFET
VDS=55V ; ID=230A@ VGS=10V ; RDS(on)< 3mOHMS @ VGS=10V
Special process technology for high EDS capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissiparion
Applications
Power switching
Hard Switched and High Frequency Circuits