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MIG150Q101H
202,13 $
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MIG150Q101H
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Features
SILICON N-Channel IGBT Module
Integrates inverter power & control circuits (IGBT drive units, protection units for over-current, ubder-voltage & over-temperature) in a one package
The electrodes are isolated from case
High speed type IGBT : VCE(sat) = 3.5 V (Max)
toff = 3.8 us (Max)
trr = 0.24 us (Max)
Package Dimensions : TOSHIBA 2-12A1A
Weight : 510 g
Aplications
Applications
High Power Switching
Motor Control
MIG150Q101H
Riferimenti Specifici
- MPN
- MIG150Q101H
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