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IRG4BC30FDP
1,31 $
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IRG4BC30FDP
Política de seguridad
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Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Fast Optimized for medium operating
frequencies ( 1 - 5 kHz in hard switching, >20
kHz in resonant mode)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than Generation 3
IGBT co-package with HEXFRED ultrafast, ultra
-soft, recovery anti-parallel diodes for use in
bridge configurations
Industry standar TO-220AB package
Lead-Free
Aplications
Semiconductors High Power Equipment Repair
IRG4BC30FDP
Riferimenti Specifici
- MPN
- IRG4BC30FDP
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