• On request
SKM200GAL123DKLD110
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  • SKM200GAL123DKLD110
  • SKM200GAL123DKLD110
  • SKM200GAL123DKLD110

SKM200GAL123DKLD110

328,13 $
Nessuna tassa

MODULOS IGBT

Última actualización

DatasheetSKM200GAL123DKLD110

200A/1200V/1U

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Delivery time :

Quantità
On request

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Features

IGBT MODULE

MOS input (voltage controlled)

N channel, Homogeneous Si

Low inductance case

Very low tail current with low temperature dependende

High short circuit capability, self limiting to 6 Icnom

Latch-up free

Fast & soft inverse CAL diodes

Isolated copper baseplate using DCB Direct Copper Bonding Technology

Large clearance (13mm) and creepage distances (20 mm)

Aplications

Applications

Switching ( not for linear use )

SKM200GAL123DKLD110

Riferimenti Specifici

MPN
SKM200GAL123DKLD110
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