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FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
4V Gate Drive
Low Drain-Source ON Resistence : RDS(ON)=0.95 OHMS (Typ)
High Forward Transfer Admittance : |Yfs|=0.65S (Typ.)
Low Leakage Current : IGSS=+-3uA (MAX.)@ VGS=+-16V IDSS =100uA (Max.) @ (VDS=-100V)
Enhancement-Mode
Vth=0.8 - 2.0V @ VDS=10V, ID=1mA
Applications
HIGH SPEED SWITCHING
RELAY DRIVER
DC-DC CONVERTERS