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Silicon N-channel Power F-MOS FET
Low ON resistance RDS (on) : RDS (on) = 1.2 Ohms (typ.)
High switching rate : tf = 60ns (typ.)
No secondary breakdown
High breakdown voltage, large power
Applications
No contact relay
Solenoid drive
Motor drive
Control equipment
Switching power source
Matsushita
2SK996
TRANSISTOR, SEE ALT/SUB