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Emitter switched bipolar transistor
High voltage / high current cascode configuration
Low equivalent on resistance
Very fast-switch, up to 150 kHz
Squared RBSOA, up to 1700 V
Very low Ciss driven by RG = 47 Ohms
Very low turn-off cross over time
In compliance with the 2002/EC European Directive
Applications
Aux SMPS for three phase mains