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GB75DA120UP
91,88 $
Nessuna tassa
GB75DA120UP
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Features
Insulated Gate Bipolar Transistor (Ultrafast IGBT)
NPT generation V IGBT technology
Square RBSOA
HEXFRED low Qrr, low switching energy
Positive VCE(on) temperature coefficient
Fully isolated package
Speed 8 kHz to 60 kHz
Very low internal inductance (<5 nH typical)
Industry standar outline
UL aproved file E78996 RU
Aplications
Semiconductors High Power Equipment Repair
GB75DA120UP
Riferimenti Specifici
- MPN
- GB75DA120UP
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