Features
- IGBT POWER MODULE
- Low VCE(sat) SPT+ IGBT technology
- 10 us short circuit capability
- Vce(sat) with positive temperature coefficient
- Maximum juntion temperature 175 C
- Low inductance acse
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology trench IGBT technology
- 10 us short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum juntion temperature 175 u00c2u00ba C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated co
Aplications
- Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
GD75PIL120C6S
Riferimenti Specifici
- MPN
- GD75PIL120C6S