- Non disponibile
MTB3N120E/D
5,25 $
Nessuna tassa
MTB3N120E/D
Política de seguridad
(Los productos cuentan con garantía limitada, por favor revisa nuestras condiciones)
Política de entrega
(Envíos de 1-2 días hábiles para productos de stock)
Features
- TMOS POWER FET
- Avalanche Energy Capability Specified at
- Elevated Temperature
- Low Stored Gate Charge for Efficient Switching
- Internal Source-to-Drain Diode Designed to
- Replace External Zener Transient Suppresor
- Absorbs High Energy in the Avalanche Mode
- Source -to Drain Diode Recovery time Compatible
- to Discrete Fast Recovery Diode
- Very Wide input Voltage Range; Off-line Flybacks
- Switching Power Supply
Aplications
- Semiconductors High Power Equipment Repair
MTB3N120E/D
Riferimenti Specifici
- MPN
- MTB3N120E/D
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