- On request
MTB3N120E/D
5,25 $
Nessuna tassa
MTB3N120E/D
Política de seguridad
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Features
TMOS POWER FET
Avalanche Energy Capability Specified at
Elevated Temperature
Low Stored Gate Charge for Efficient Switching
Internal Source-to-Drain Diode Designed to
Replace External Zener Transient Suppresor
Absorbs High Energy in the Avalanche Mode
Source -to Drain Diode Recovery time Compatible
to Discrete Fast Recovery Diode
Very Wide input Voltage Range; Off-line Flybacks
Switching Power Supply
Aplications
Semiconductors High Power Equipment Repair
MTB3N120E/D
Riferimenti Specifici
- MPN
- MTB3N120E/D
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