- On request
MTP16N25E
7,88 $
Nessuna tassa
MTP16N25E
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Features
Power Field Effect Transistor
Features
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast recovery DiodeDiode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevared temperature
Aplications
Semiconductors High Power Equipment Repair
MTP16N25E
Riferimenti Specifici
- MPN
- MTP16N25E
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