- On request
RJP30H2A
3,94 $
Nessuna tassa
RJP30H2A
Política de seguridad
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Features
Silicon N Channel IGBT
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage : VCE(sat) = 1.4 V typ
High speed switching : tf = 100 ns typ, tr = 180 ns typ
Low leak current : ICES = 1 uA max
Aplications
Semiconductors High Power Equipment Repair
RJP30H2A
Riferimenti Specifici
- MPN
- RJP30H2A
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