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SILICON N CHANNEL IGBT MODULE
Intelligent Power Module that include
IGBT drive circuits, overcurrent,
undervoltage lockout, and overtemperature
protection
The Electrodes are Isolated from Case
High speed type IGBT :
VCE(sat) = 2.7V (Max.)
toff = 2.0 us (Max.)
trr = 0.25 us (Max.)
Outline : TOSHIBA 2-99E1A (See page 5 for the
device outline)
Applications
High Power Switching
Motor Control