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MODULO TRANSISTOR DARLINGTON
Última actualización
20A/60V/4U
No Identificado
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POWER MOS FET MODULE
4 V Gate Drive Available
Small Package by Full Molding ( SIP 10 Pin)
High Drain Power Dissipation (4 Devices Operation) :
PT = 4 W (Ta=25u00c2u00b0C)
Low Drain-Source ON Resistance : RDS(ON) = 0.16 Ohms
(typ)
High Forward Transfer Admittance : |Yfs| = 4.0 S (typ.)
Low Leakage Current : IGSS = +-10 uA (max.) (VGS = +-16 V)
IDSS = -100 uA (max.) (VDS = -60 V)
Enhancement-Mode : Vth = -0.8 - 2.0 V
(VDS = -10 V, ID = -1 mA)
Applications
High Power
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Driver