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Low Loss IGBT MODULE
MOS input (voltage controlled)
N channel, homogeneous Silicon
structure (NPT-Non punch-through IGBT )
Low loss high density chip
Low tail current
High short circuit capability, self limiting to 6 x Icnom
Latch-up free
Fast & soft inverse CAL diodes
Isolated copper baseplate using DCB Direct Copper Bonding Technology
Large clearance ( 10 mm ) and creepage distances ( 20 mm )
Applications
Switching (not for linear use)
Semikron
SKM100GB124D
IGBT 100A 1200V DUAL