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Low Loss IGBT MODULE
MOS input (voltage controlled)
N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)
Low inductance case
Very low tail current with low temperature dependence
High short circuit capability, self limiting to 6 x Icnom
Latch-up free
Fast & soft inverse CAL diodes
Isolated copper baseplate using DBC Direct copper Bonding Technology
Large clearance ( 12 mm ) and creepage distances ( 20 mm )
Applications
Switching ( not for linear use )
AC Inverters drives
UPS
Semikron
SKM300GB124D
IGBT 300A 1200V DUAL ; Type; Dual
Vces; 1200 Volts DC
Ic; 300 Amps
Vges +/-; 20
Ices Max; 0.6 MilliAmps
Vge(th) Min/Max; 4.5~6.5 Volts
Vce(sat) Max; 2.45 Volts
Height (mm); 30.5
Width (mm); 106.4
Depth (mm); 61.4
RoHS; Yes ;