Features
- Silicon NPN Power Transistor
- Collector-Emitter Breakdown Voltage
- B(BR)CEO = 40V (Min)
- Collector Power Dissipation
- : Pc = 25W @ Tc= 25C
- Minimum Lot-to-Lot variations robust device performance and reliable operation
Aplications
- Applications
- Designed for use in general purpose amplifier and switching
VS-403CNQ100PBF
Referencias Específicas
- Nº Pieza fabricante (NPM)
- VS-403CNQ100PBF