AQY212EH

• GU-EPhotoMOS
• Features
• 1. Reinforced insulation 5,000 V type
• More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation).
• 2. Compact 4-pin DIP size The device comes in a compact (W)6.4x(L)4.78x(H)3.2mm, 4-pin DIP size
• 3. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
• 4. High sensitivity, low ON resistance Can control a maximun 0.13 A load current with a 5 mA input current.Low ON resistance of 25 Ohms (AQYEH) Stable operation because there are no metallic contac parts.
• 5. Low-level off state leakage current
• The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has typ. 100 pA even with the rated load voltage of 350 V (AQY210EH).

• Applications
• Modem
• Telephone equipment
• Security equipment
• Sensors

Marca:

No identificado

Características electricas: 0.55A/60V/1U