AQY212EH

GU-EPhotoMOS

1. Reinforced insulation 5,000 V type

More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation).

2. Compact 4-pin DIP size The device comes in a compact (W)6.4x(L)4.78x(H)3.2mm, 4-pin DIP size

3. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.

4. High sensitivity, low ON resistance Can control a maximun 0.13 A load current with a 5 mA input current.Low ON resistance of 25 Ohms (AQYEH) Stable operation because there are no metallic contac parts.

5. Low-level off state leakage current

The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has typ. 100 pA even with the rated load voltage of 350 V (AQY210EH).

Applications

Modem

Telephone equipment

Security equipment

Sensors